가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFBA90N20DPBF | 0 | 150 | Bulk | 12h | |||||||
| Farnell | IRFBA90N20DPBF | 0 | 1 | 23h | ||||||||
| Component Stockers USA | IRFBA90N20DPBF | 24,778 | >1wk | |||||||||
| Win Source | WS-IRFBA90N20DPBF | 20 | 21 | 23h | ||||||||
| Worldway Electronics | IRFBA90N20D | 27,907 | 7 | Tape & Reel | 1h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-09-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-12-28
LTD Date2013-06-28
관련 부품
InfineonIRFP90N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V
설명
유통업체에서 제공한 Infineon IRFBA90N20DPBF에 대한 설명입니다.
200V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package, SUPER220-3, RoHS
Infineon SCT
Trans Mosfet N-Ch 200V 98A 3-Pin(3+Tab) To-273Aa Rohs Compliant: Yes
Single N-Channel 200 V 0.023 Ohm 160 nC HEXFET® Power Mosfet - SBM-2
IRFBA90N20DPBF,MOSFET, 200V, 9 8A, 23 MOHM, 160 NC QG, TO-27
HEXFET POWER MOSFET Power Field-Effect Transistor, 95A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)95 A
Current Rating98 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance6.08 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation650 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance23 mΩ
Package Quantity50
PackagingBulk
Power Dissipation650 W
Rds On Max23 mΩ
Resistance23 Ω
Rise Time160 ns
Threshold Voltage5 V
Turn-Off Delay Time39 ns
Turn-On Delay Time23 ns
Voltage Rating (DC)200 V
Dimensions
Height20.5 mm
Length10.9982 mm
Width5 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책