가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 238-IXFH30N50Q3-ND | 614 | 1 | Tube | ||||||||
| TME | IXFH30N50Q3 | 0 | 1 | 7h | ||||||||
| TTI | IXFH30N50Q3 | 0 | 300 | Tube | 4d | |||||||
| Newark | IXFH30N50Q3 | 0 | 1 | |||||||||
| Onlinecomponents.com | IXFH30N50Q3 | 0 | 75 | Bulk |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
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N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-247 package
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N-channel 500 V, 0.162 Ohm, 17 A, TO-247 MDmesh(TM) II Power MOSFET
InfineonIPW50R199CPFKSA1
Mosfet Transistor, N Channel, 17 A, 550 V, 199 Mohm, 10 V, 3 V Rohs Compliant: Yes
InfineonIPW60R160P6FKSA1
Power MOSFET, N Channel, 600 V, 23.8 A, 160 mOhm, TO-247, 3 Pins, Through Hole
설명
유통업체에서 제공한 Littelfuse IXFH30N50Q3에 대한 설명입니다.
MOSFET, Single - N-Channel, 500V, 30A, 690W, TO-247
500V 30A Q3-Class Hiper FETTM Power Mosfet -TO-247
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247AD
Discmsft Nchhiperfet-Q3 Class To-247Ad/Tube |Littelfuse IXFH30N50Q3
N-Ch 500V 30A 690W 0,2R TO247AD
IXYS NMOS HiperFET, Q3-Class, Vds=500 V, 30 A, TO-247, , 3
Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Q3-Class Series - 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs), TO-247AD, RoHS
Littelfuse SCT
제조업체 별칭
Littelfuse에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Littelfuse는 다음 이름으로도 알려져 있습니다:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.2 nF
Max Operating Temperature150 °C
Max Power Dissipation690 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation690 W
Rds On Max200 mΩ
Reverse Recovery Time250 ns
Rise Time250 ns
Turn-Off Delay Time26 ns
Turn-On Delay Time14 ns
Dimensions
Height16.26 mm
Length16.26 mm
Width5.3 mm