공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-06-15
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
관련 부품
STMicroelectronicsSTW33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package
STMicroelectronicsSTW26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
STMicroelectronicsSTW28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package
InfineonIPW60R160P6FKSA1
Power MOSFET, N Channel, 600 V, 23.8 A, 160 mOhm, TO-247, 3 Pins, Through Hole
설명
유통업체에서 제공한 onsemi FCH22N60N에 대한 설명입니다.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-247
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 22A TO-247
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET,N CH,600V,22A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:205W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.95 nF
Max Operating Temperature150 °C
Max Power Dissipation205 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingRail/Tube
Power Dissipation205 W
Rds On Max165 mΩ
Rise Time16.7 ns
Threshold Voltage3 V
Turn-Off Delay Time49 ns
Turn-On Delay Time16.9 ns
Dimensions
Height21 mm
Length15.95 mm
Width5.03 mm