공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-01-31
LTD Date2019-07-31
관련 부품
InfineonIPD50N04S408ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 7.9 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount
InfineonIPD50N04S4L08ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 0.0062 ohm, TO-252 (DPAK), Surface Mount
Diodes Inc.DMTH4007LK3-13
2.6W(Ta) 20V 3V@ 250¦ÌA 29.1nC@ 10 V 1N 40V 7.3m¦¸@ 20A,10V 16.8A,70A 1.895nF@30V TO-252-3
Diodes Inc.DMTH4007LK3Q-13
Mosfet, N-Ch, 40V, 70A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH4007LK3Q-13
설명
유통업체에서 제공한 International Rectifier AUIRFR3504TRL에 대한 설명입니다.
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
Trans MOSFET N-CH 40V 87A 3-Pin(2+Tab) DPAK T/R
MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms
Power Field-Effect Transistor, 56A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
제조업체 별칭
International Rectifier에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. International Rectifier는 다음 이름으로도 알려져 있습니다:
- I&R
- IRF
- IOR
- INT'L RECTIFIER
- INTERNATIONAL RECTIFIER CORP
- INTERNATIONAL RECTIF
- RECT
- INT RECTIFIER
- OMNIREL
- INTERNATIO
- INT RECT
- SEMCOR
- INTLRECT
- INTERNATIONA
- INTERNATIONAL R
- INTERNATIONAL MICROCIRCUITS
- InternationRectifer
- INTER RECTIFIER
- International Rectifier (IR)
- INTERNATI
- IR - International Rectifier
- INTERNATIONAL RECT
- INTERNATIONAL RECTIFIER SE
- INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
- INTER REC
- IR
- International Rect.
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9.2 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance9.2 mΩ
Package Quantity3000
PackagingTape & Reel (TR)
Power Dissipation140 W
Rds On Max9.2 mΩ
Rise Time53 ns
Turn-Off Delay Time36 ns
Turn-On Delay Time11 ns