공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-07-30
Lifecycle StatusNRND (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW55NM60ND
Mosfet Transistor, N Channel, 51 A, 600 V, 0.047 Ohm, 10 V, 4 V Rohs Compliant: Yes
InfineonIPW60R099C6FKSA1
Power MOSFET, N Channel, 650 V, 37.9 A, 99 Milliohms, TO-247, 3 Pins, Through Hole
InfineonIPW65R070C6FKSA1
Power MOSFET, N Channel, 650 V, 53.5 A, 0.063 ohm, TO-247, Through Hole
STMicroelectronicsSTW69N65M5
N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in TO-247 package
STMicroelectronicsSTW54NM65ND
N-channel 650 V, 0.055 Ohm typ., 49 A FDmesh(TM) II Power MOSFET (with fast diode) in a TO-247 package
STMicroelectronicsSTW56N65DM2
N-channel 650 V, 0.052 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
VishaySIHG47N65E-GE3
Mosfet, N-Ch, 650V, 47A, To-247Ac Rohs Compliant: Yes |Vishay SIHG47N65E-GE3
VishaySIHG47N60E-GE3
MOSFET, N CH, 600V, 47A, TO-247AC-3; Transistor Polarity:N Channel; Continuous D
VishaySIHW47N60E-GE3
MOSFET, N CH, 600V, 47A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
설명
유통업체에서 제공한 Infineon SPW47N60C3FKSA1에 대한 설명입니다.
Infineon Technologies N channel CoolMOS power transistor, 650 V, 47 A, TO-247, SPW47N60C3FKSA1
COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N Channel Mosfet, 650V, 47A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:47A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon Technologies SPW47N60C3FKSA1.
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 47 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 111 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 415
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:650V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:415W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:47A; Current Id Max:47A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:415W; Power Dissipation Pd:415W; Power Dissipation Ptot Max:415W; Pulse Current Idm:141A; Termination Type:Through Hole; Voltage Vds:650V; Voltage Vds Typ:650V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V
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- Infineon Technologies
- INF
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- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
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- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)47 A
Current Rating47 A
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation415 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance70 mΩ
Package Quantity240
Power Dissipation415 W
Rise Time27 ns
Schedule B8541290080
Turn-Off Delay Time111 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)650 V