공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIHG47N60E-GE3
MOSFET, N CH, 600V, 47A, TO-247AC-3; Transistor Polarity:N Channel; Continuous D
VishaySIHG47N60E-E3
MOSFET, N CH, 600V, 47A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
STMicroelectronicsSTW58N60DM2AG
Mosfet, Aec-Q101, N-Ch, 600V, 50A, 360W Rohs Compliant: Yes |Stmicroelectronics STW58N60DM2AG
STMicroelectronicsSTWA57N65M5
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in TO-247 long leads package
설명
유통업체에서 제공한 Vishay SIHW47N60E-GE3에 대한 설명입니다.
MOSFET, N CH, 600V, 47A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
357W(Tc) 20V 4V@ 250¦ÌA 220nC@ 10 V 1N 600V 64m¦¸@ 24A,10V 47A 9.62nF@100V TO-247AD 21.46mm
E Series N-Channel 650 V 0.064 O 225 nC Flange Mount Power Mosfet - TO-247AD
Power Field-Effect Transistor 47A I(D)
MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS
Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)47 A
Drain to Source Resistance64 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.62 nF
Max Operating Temperature150 °C
Max Power Dissipation357 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation357 W
Rds On Max64 mΩ
Resistance64 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time140 ns
Turn-On Delay Time50 ns