공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-06-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW58N65DM2AG
Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
VishaySIHG47N60E-GE3
MOSFET, N CH, 600V, 47A, TO-247AC-3; Transistor Polarity:N Channel; Continuous D
VishaySIHW47N60E-GE3
MOSFET, N CH, 600V, 47A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
VishaySIHG47N60E-E3
MOSFET, N CH, 600V, 47A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
설명
유통업체에서 제공한 Vishay SIHG47N65E-GE3에 대한 설명입니다.
Mosfet, N-Ch, 650V, 47A, To-247Ac Rohs Compliant: Yes |Vishay SIHG47N65E-GE3
Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247AC
650V, 47A, 72Mohm, 182nCQg, TO-247
N-Channel 650 V 47A (Tc) 417W (Tc) Through Hole TO-247AC
Power Field-Effect Transistor, 47A I(D), 650V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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- VISH
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- Vishay Intertechnology
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
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- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
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- Vishay Semiconductor Diodes Division
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)47 A
Drain to Source Resistance72 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time103 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.682 nF
Max Operating Temperature150 °C
Max Power Dissipation417 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation417 W
Rds On Max72 mΩ
Rise Time87 ns
Schedule B8541290080
Turn-Off Delay Time156 ns
Turn-On Delay Time47 ns