가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | SPP15N60CFDXKSA1 | 500 | 1 | |||||||||
| Future Electronics | SPP15N60CFDXKSA1 | 0 | 500 | Tube | ||||||||
| Avnet | SPP15N60CFDXKSA1 | 0 | 500 | 1d | ||||||||
| Farnell | SPP15N60CFDXKSA1 | 0 | 1 | 3h | ||||||||
| Microchip USA | SPP15N60CFDXKSA1 | 1,304 | 600 | Tube | 20h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-30
Lifecycle StatusNRND (Last Updated: 3 months ago)
관련 부품
VishaySIHP15N60E-GE3
180W(Tc) 30V 4V@ 250¦ÌA 78nC@ 10 V 1N 600V 280m¦¸@ 8A,10V 15A 1.35nF@100V TO-220AB 9.01mm
VishaySIHP12N60E-GE3
E-Series N-Channel 600 V 147 W 0.38 O 58 nC Flange Mount Power Mosfet - TO-220AB
설명
유통업체에서 제공한 Infineon SPP15N60CFDXKSA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 13.4A 3-Pin(3+Tab) TO-220AB Tube
LOW POWER_LEGACY / N-Channel 600 V 13.4A (Tc) 156W (Tc) Through Hole PG-TO220-3-1
Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13.4 A
Drain to Source Resistance330 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.82 nF
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation156 W
Rise Time24 ns
Turn-Off Delay Time47 ns
Turn-On Delay Time43 ns
Dimensions
Height15.95 mm
Length10.36 mm
Width4.57 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책