대체 부품
Price @ 1000
$ 14.4
$ 17.487
$ 17.487
Stock
18,744
20,269
20,269
Authorized Distributors
1
2
2
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-39
TO-39
TO-39
Drain to Source Voltage (Vdss)
200 V
200 V
200 V
Continuous Drain Current (ID)
5.5 A
5.5 A
5.5 A
Threshold Voltage
-
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
25 W
25 W
25 W
Input Capacitance
-
-
-
관련 부품
InfineonJANTX2N6849
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
설명
유통업체에서 제공한 Infineon JANTX2N6798에 대한 설명입니다.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
2N6798 Series 200 V 420 mOhm Through Hole N-Channel Mosfet - TO-205AF
100 V, 200 V, 400 V AND 500 V, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 3TO-205
N-CH ENHANCEMENT MODE MOSFET POWER TRANSISTOR Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance420 mΩ
Drain to Source Voltage (Vdss)200 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance400 mΩ
PackagingBulk
Power Dissipation25 W
Schedule B8541290080
Turn-Off Delay Time50 ns
Turn-On Delay Time30 ns