공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonJANTX2N6851
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
설명
유통업체에서 제공한 Infineon IRFF9230에 대한 설명입니다.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3
Infineon SCT
Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
MOSFET; Transistor Polarity:P Channel; C; Transistor Polarity:P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:75mJ; Current Id Max:-4A; Current Temperature:25°C; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Length:14.22mm; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:16A; Termination Type:Through Hole; Voltage Vds Typ:-200V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:4V; Weight:0.98g
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Body MaterialMetal
Case/PackageTO-39-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight980 mg
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance1.68 Ω
Drain to Source Voltage (Vdss)-200 V
Dual Supply Voltage-200 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance800 mΩ
Power Dissipation25 W
TerminationThrough Hole
Turn-Off Delay Time80 ns
Turn-On Delay Time50 ns
Dimensions
Height4.57 mm
Lead Length14.22 mm