공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 7 months ago)
관련 부품
InfineonIRLR2905PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
InfineonAUIRLR2905
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonAUIRLR2905TRL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
VishaySQD30N05-20L_GE3
VISHAY SQD30N05-20L -GE3 MOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
설명
유통업체에서 제공한 Infineon IRLR2905TRLPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Mosfet, N-Ch, 55V, 42A, To-252Aa Rohs Compliant: Yes |Infineon Technologies IRLR2905TRLPBF
Single N-Channel 55 V 27 mOhm 48 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 55V, 42A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating41 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
Power Dissipation69 W
Rds On Max27 mΩ
Rise Time84 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책