공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRLR2905PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
InfineonIRLR2905TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
InfineonIRLR2905TRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
VishaySQD30N05-20L_GE3
VISHAY SQD30N05-20L -GE3 MOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
설명
유통업체에서 제공한 Infineon AUIRLR2905TRL에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 42A Automotive 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
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- Infineon Technologies
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- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
PackagingTape and Reel
Power Dissipation110 W
Rds On Max27 mΩ
Rise Time84 ns
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns