가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | FDD86580-F085 | 1,732 | 7d | |||||||||
| Avnet | FDD86580_F085 | 0 | 2500 | 1d | ||||||||
| Farnell | FDD86580-F085 | 2,067 | 1 | Cut Tape | 3h | |||||||
| element14 APAC | FDD86580-F085 | 2,067 | 1 | Cut Tape | 16h | |||||||
| Mouser | 512-FDD86580_F085 | 3,529 | 1 | Tape & Reel |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2016-04-12
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2023-09-30
LTD Date2024-03-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
관련 부품
InfineonIRFR3806PBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12.6 Milliohms;ID 43A;D-Pak;PD 71W;VGS +/-20
InfineonIRFR2405PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
설명
유통업체에서 제공한 onsemi FDD86580-F085에 대한 설명입니다.
PowerTrench® MOSFET, N-Channel, 60 V,50 A, 10 mΩ
FAIRCHILD SEMICONDUCTOR FDD86580_F085 MOSFET Transistor, N Channel, 50 A, 60 V, 0.0078 ohm, 10 V, 3.6 VNew
Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R
75W(Tj) 20V 4.2V@ 250¦ÌA 30nC@ 10 V 1N 60V 19m¦¸@ 50A,10V 50A 1.43nF@30V TO-252AA 6.73mm*6.22mm*2.39mm
MV7 60/20V 1000APWRTRENCH MOSFET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation75 W
Rds On Max19 mΩ
Schedule B8541290080
Threshold Voltage3.6 V
Turn-Off Delay Time15 ns
Turn-On Delay Time12 ns
Dimensions
Height2.517 mm