가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRLML5203TRPBF | 28,058 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLML5203TRPBF | 333,000 | 3K | Tape & Reel | ||||||||
| Arrow Electronics | IRLML5203TRPBF | 325,951 | 1 | |||||||||
| DigiKey | IRLML5203TRPBFCT-ND | 14,330 | 1 | Cut Tape | ||||||||
| Avnet | IRLML5203TRPBF | 0 | 6K | 14h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-05
Lifecycle StatusEOL (Last Updated: 4 months ago)
관련 부품
InfineonIRLML9301TRPBF
Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML2030TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
InfineonIRLML9303TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHS
Diodes Inc.DMG3406L-7
Transistor: N-MOSFET; unipolar; 30V; 2.8A; 0,07ohm;1.4W; -55+150 st.C; SMD; SOT23
설명
유통업체에서 제공한 Infineon IRLML5203TRPBF에 대한 설명입니다.
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 98Milliohms;ID -3A;Micro3;PD 1.25W;-55degc
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount
HEXFET Power MOSFET Small Signal Field-Effect Transistor
Single P-Channel 30 V 165 mOhm 14 nC HEXFET® Power Mosfet - MICRO-3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-3A; On Resistance, Rds(on):98mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:Micro3 ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3 A
Current Rating-3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance98 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance510 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Elements1
On-State Resistance98 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max98 mΩ
Resistance98 MΩ
Rise Time18 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-2.5 V
Turn-Off Delay Time88 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width3.05 mm