가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLML2030TRPBF | 21,000 | 3K | 2d | ||||||||
| Newark | IRLML2030TRPBF | 7,924 | 5 | Cut Tape | ||||||||
| Arrow Electronics | IRLML2030TRPBF | 6,265 | 1 | |||||||||
| Future Electronics | IRLML2030TRPBF | 48,000 | 3K | Tape & Reel | ||||||||
| Rochester Electronics | IRLML2030TRPBF | 76,299 | 22h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-11-04
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
InfineonIRLML5203TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 98Milliohms;ID -3A;Micro3;PD 1.25W;-55degc
InfineonIRLML9303TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHS
설명
유통업체에서 제공한 Infineon IRLML2030TRPBF에 대한 설명입니다.
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R
Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
HEXFET POWER MOSFET Small Signal Field-Effect Transistor
MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23
MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:1.3W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRLML2030TRPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance110 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
On-State Resistance100 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max100 mΩ
Recovery Time14 ns
Resistance100 MΩ
Rise Time3.3 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time4.5 ns
Turn-On Delay Time4.1 ns
Dimensions
Height1.12 mm
Length3.0226 mm
Width1.397 mm