공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-16
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
Diodes Inc.ZXMN2F34FHTA
Power MOSFET, Low Voltage, N Channel, 20 V, 4 A, 0.06 ohm, SOT-23, Surface Mount
InfineonIRFML8244TRPBF
25V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
설명
유통업체에서 제공한 Diodes Inc. ZXMN2F30FHTA에 대한 설명입니다.
ZXMN2F30FH Series N-Channel 20 V 0.045 Ohm Power MOSFET Surface Mount - SOT-23-3
DIODES INC ZXMN2F30FHTA N-CHANNEL MOSFET, 4.9 A, 20 V, 3-PIN SOT-23
Trans MOSFET N-CH 20V 4.9A Automotive 3-Pin SOT-23 T/R
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 1.4 W
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:960mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; On State Resistance @ Vgs = 2.5V:65mohm; On State Resistance @ Vgs = 4.5V:45mohm; Package / Case:SOT-23; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:0.6V
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)4.1 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time5.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance452 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation960 mW
Rds On Max45 mΩ
Resistance45 mΩ
Rise Time5.6 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage900 mV
Turn-Off Delay Time19.4 ns
Turn-On Delay Time2.9 ns
Dimensions
Height1.1 mm
Length3.04 mm
Width1.4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책