공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-26
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
VishaySI2356DS-T1-GE3
Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel Mosfet - SOT-23-3
InfineonIRLML2030TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
InfineonIRLML9301TRPBF
Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55+150 deg.C; SMD; SOT23
설명
유통업체에서 제공한 Infineon IRLML0040TRPBF에 대한 설명입니다.
Power MOSFET, N Channel, 40 V, 3.6 A, 56 Milliohms, SOT-23, 3 Pins, Surface Mount
40V Single N-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 40 V 78 mOhm 3.9 nC HEXFET® Power Mosfet - SOT-23
N Channel, MOSFET, 40V, 3.6 A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
MOSFET, 40V, 3.6A, 56 MOHM, 2.6 NC QG, SOT-23
Power Field-Effect Transistor, 3.6A I(D), 40V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance56 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time4.3 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance266 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance56 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max56 mΩ
Resistance56 MΩ
Rise Time5.4 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time6.4 ns
Turn-On Delay Time5.1 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm