대체 부품
Price @ 1000
$ 0.372
Stock
393,490
599,663
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT-223
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
5 A
5 A
Threshold Voltage
3 V
-
Rds On Max
60 mΩ
60 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
1 W
2.8 W
Input Capacitance
380 pF
380 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-07-16
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2009-08-19
LTD Date2010-02-19
관련 부품
InfineonIRFL024ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46.2 Milliohms;ID 5.1A;SOT-223;PD 1W;VF 1.3V
Diodes Inc.ZXMP4A16GTA
ZXMP4A16G Series 40 V 0.06 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
설명
유통업체에서 제공한 Infineon IRLL024ZPBF에 대한 설명입니다.
Single N-Channel 55 V 100 mOhm 11 nC HEXFET® Power Mosfet - SOT-223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
MOSFET, 55V, 5A, 60 MOHM, 7 NC QG, LOGIC LEVEL, SOT-223
Trans MOSFET N-CH 55V 5A 4-Pin(3+Tab) SOT-223
Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: Load Switch High Side
MOSFET TRANSISTOR; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:5A; Package / Case:SOT-223; Power Dissipation Pd:2.8W; Voltage Vds Typ:55V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance380 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity1760
PackagingBulk
Power Dissipation1 W
Rds On Max60 mΩ
Resistance60 MΩ
Rise Time33 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8.6 ns
Voltage Rating (DC)55 V
Dimensions
Height1.8 mm
Length6.6802 mm
Width3.7 mm