가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFL024ZTRPBF | 4,546 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFL024ZTRPBF | 21,324 | 1 | |||||||||
| Rochester Electronics | IRFL024ZTRPBF | 557 | 23h | |||||||||
| DigiKey | IRFL024ZTRPBFCT-ND | 57,454 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFL024ZTRPBF | 0 | 2500 | Tape & Reel |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-26
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
InfineonIRFL024ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46.2 Milliohms;ID 5.1A;SOT-223;PD 1W;VF 1.3V
InfineonIRFL4105TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 3.7A;SOT-223;PD 1W;VGS +/-20V
Diodes Inc.DMN6068SE-13
N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223-3
설명
유통업체에서 제공한 Infineon IRFL024ZTRPBF에 대한 설명입니다.
Single N-Channel 55 V 57.5 mOhm 9.1 nC HEXFET® Power Mosfet - SOT-223
Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 5.1A SOT223
Small Signal Field-Effect Transistor, 5.1A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:5.1A; On Resistance, Rds(on):57.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.1 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance57.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance57.5 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max57.5 mΩ
Rise Time21 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time7.8 ns
Dimensions
Height1.8 mm
Length6.6802 mm
Width3.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책