대체 부품
Price @ 1000
$ 0.366
$ 0.657
$ 0.657
Stock
1,897,701
379,498
379,498
Authorized Distributors
6
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT-223
SOT-223
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
3.1 A
3.1 A
3.1 A
Threshold Voltage
2 V
1 V
1 V
Rds On Max
65 mΩ
65 mΩ
65 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
2.1 W
1 W
1 W
Input Capacitance
510 pF
510 pF
510 pF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-21
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
InfineonIRLL024NPBF
Transistor: N-MOSFET; unipolar; 55V; 4.4A; 0.065ohm; 2.1W; -55+150 deg.C; SMD; SOT223
InfineonIRLL2705PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 3.8A;SOT-223;PD 1W;VGS +/-16V;-55
InfineonIRLL2705TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 3.8A;SOT-223;PD 1W;VGS +/-16V;-55
설명
유통업체에서 제공한 Infineon IRLL024NTRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 4.4A;SOT-223;PD 2.1W;VGS +/-16V
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 3.1A SOT223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
IRLL024NTRPBF,MOSFET, 55V, 4.4 A, 65 MOHM, 10.4 NC QG, LOGIC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.4A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:223-SOT; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4.4 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 16 / Fall Time ns = 25 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)3.1 A
Current Rating3.1 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance510 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Manufacturer Package IdentifierIRLL024NTRPBF
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance65 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time21 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time18 ns
Turn-On Delay Time7.4 ns
Voltage Rating (DC)55 V
Dimensions
Height1.8 mm
Length6.6802 mm
Width3.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책