가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLHS6376TRPBF | 12,000 | 4K | 1d | ||||||||
| Newark | IRLHS6376TRPBF | 82 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRLHS6376TRPBF | 1,552 | 1 | |||||||||
| Future Electronics | IRLHS6376TRPBF | 8,000 | 4K | Tape & Reel | ||||||||
| Rutronik | TMOSS6784 | 4,000 | 4K | 18h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-19
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
설명
유통업체에서 제공한 Infineon IRLHS6376TRPBF에 대한 설명입니다.
Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
Infineon SCT
Transistor MOSFET Array Dual N-CH 30V 3.4A 6-Pin PQFN T/R
Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
DUAL N CH, 30V, 3.6A, PQFN-6; Transistor; DUAL N CH, 30V, 3.6A, PQFN-6; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:3.6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.048ohm; Rds(on) Test Voltage Vgs:4.5V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance82 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time9.4 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance270 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation6.6 W
Manufacturer Package IdentifierPG-TSDSON-6
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Elements2
Package Quantity4000
PackagingTape & Reel
Power Dissipation1.5 W
Rds On Max63 mΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time11 ns
Turn-On Delay Time4.4 ns