가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF7309TRPBF | 4,000 | 4K | 1d | ||||||||
| Newark | IRF7309TRPBF | 5,492 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF7309TRPBF | 3,643 | 1 | |||||||||
| Future Electronics | IRF7309TRPBF | 124,000 | 4K | Tape & Reel | ||||||||
| Rutronik | TMOSP11870 | 12,000 | 4K | 12h |
관련 부품
onsemiNTMD4884NFR2G
Tape & Reel (TR) Surface Mount N-Channel Dual Mosfet Transistor 3.3A Ta 5.7A 2.3W 1.4ns
InfineonIRF9952TRPBF
MOSFET N/P-CH 30V 8-SOIC / Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC N T/R
InfineonIRF7306PBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRF7309TRPBF에 대한 설명입니다.
Dual N/P-Channel 30 V 0.08/0.16 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4 A, 4 A, 0.05 ohm
Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Channel Type:Dual N And Dual P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:4A; Continuous Drain Current Id P Channel:3A; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon Technologies IRF7309TRPBF.
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 4.7 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.4
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기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance520 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance80 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation1.4 W
Rds On Max50 mΩ
Resistance160 mΩ
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time25 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm