관련 부품
onsemiNTMFS5C423NLT1G
Single N−Channel Power MOSFET 40 V, 150 A, 2.0mΩ Power MOSFET 40 V, 2.0 mΩ, 150 A, Single N−Channel
onsemiNVMFS5C423NLT1G
ON SEMICONDUCTOR NVMFS5C423NLT1G MOSFET Transistor, N Channel, 150 A, 40 V, 0.0016 ohm, 10 V, 2 V
설명
유통업체에서 제공한 Infineon IRL7486MTRPBF에 대한 설명입니다.
40V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package, MG-WDSON-8, RoHS
Infineon SCT
Single N-Channel 40 V 1.25 mOhm 76 nC HEXFET® Power Mosfet - DirectFET®
Trans MOSFET N-CH Si 40V 209A 10-Pin Direct-FET ME T/R
STRONG IR FET Power Field-Effect Transistor, 209A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 40V, 209A, DIRECTFET ME-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 209A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.001ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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기술 사양
Physical
MountSurface Mount
Number of Pins2
Number of Terminals6
Technical
Continuous Drain Current (ID)209 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.904 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.25 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation104 W
Rds On Max1.25 mΩ
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time54 ns
Turn-On Delay Time35 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.05 mm