공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 9 months ago)
관련 부품
InfineonIRFS7437-7PPBF
Trans MOSFET N-CH Si 40V 295A 7-Pin(6+Tab) D2PAK Tube / MOSFET N CH 40V 195A D2PAK-7PIN
설명
유통업체에서 제공한 Infineon IRFS7437TRL7PP에 대한 설명입니다.
Single N-Channel 40 V 1.4 mOhm 150 nC HEXFET® Power Mosfet - D2PAK-7
40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
Transistor: N-MOSFET; unipolar; 40V; 195A; 231W; D2PAK-7
Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 231 W
T&R / MOSFET, 40V, 195A, 1.4 mOhm, 150 nC Qg, D2-7pin
Trans MOSFET N-CH 40V 295A 7-Pin(6+Tab) D2PAK T/R
Infineon N-Ch MOSFET Vds=40V Id=295A D2PAK-7 PCB Mount
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
MOSFET, N-CH, 40V, 195A, 7-D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:231W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
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기술 사양
Physical
Case/PackageTO-263-8
MountSurface Mount
Number of Pins7
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vds)40 V
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.437 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.4 mΩ
Package Quantity800
Power Dissipation231 W
Rds On Max1.4 mΩ
Resistance1.4 MΩ
Rise Time62 ns
Schedule B8541290080
Threshold Voltage2.2 V
Turn-Off Delay Time78 ns
Turn-On Delay Time18 ns
Dimensions
Height5.084 mm