대체 부품
Price @ 1000
$ 1.22
$ 3.76
Stock
920,357
449,439
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
23 A
23 A
Threshold Voltage
2.25 V
1.35 V
Rds On Max
3.4 mΩ
3.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.8 W
89 W
Input Capacitance
5.95 nF
5.95 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-08-18
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonIRLR8743TRPBF
Mosfet IC; Transistor Type:MOSFET; Package/Case:3-TO-251; No. of Pins:3 ;RoHS Compliant: Yes
onsemiNTMFS5C423NLT1G
Single N−Channel Power MOSFET 40 V, 150 A, 2.0mΩ Power MOSFET 40 V, 2.0 mΩ, 150 A, Single N−Channel
onsemiNVMFS5C423NLT1G
ON SEMICONDUCTOR NVMFS5C423NLT1G MOSFET Transistor, N Channel, 150 A, 40 V, 0.0016 ohm, 10 V, 2 V
설명
유통업체에서 제공한 Infineon IRF6613TRPBF에 대한 설명입니다.
Single N-Channel 40 V 3.4 mOhm 42 nC HEXFET® Power Mosfet - DirectFET®
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active ORýing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
MOSFET, N-CH, 40V, 150A, DIRECTFET MT-7; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Current Rating23 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.4 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time4.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.95 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage40 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance3.4 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max3.4 mΩ
Resistance3.4 MΩ
Rise Time47 ns
Schedule B8541290080
Threshold Voltage2.25 V
Turn-Off Delay Time27 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)40 V
Dimensions
Height700 µm
Length6.35 mm
Width5.0546 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책