Infineon IRL3705ZLPBF

MOSFET N-CH 55V 75A TO262 / N-Channel 55 V 75A (Tc) 130W (Tc) Through Hole TO-262
$ 1.18
Obsolete

가격 및 재고

데이터시트 및 문서

Infineon IRL3705ZLPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet13 페이지15년 전
Datasheet12 페이지15년 전

Factory Futures

Newark

RS (Formerly Allied Electronics)

DigiKey

재고 내역

3개월간의 트렌드:
+0.00%

대체 부품

Price @ 1000
$ 1.18
$ 1.24
Stock
232,170
79,962
Authorized Distributors
3
4
Mount
Through Hole
Through Hole
Case/Package
TO-262
TO-262
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
-
-
Rds On Max
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
130 W
130 W
Input Capacitance
2.88 nF
2.88 nF

공급망

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30

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설명

유통업체에서 제공한 Infineon IRL3705ZLPBF에 대한 설명입니다.

MOSFET N-CH 55V 75A TO262 / N-Channel 55 V 75A (Tc) 130W (Tc) Through Hole TO-262
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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부품 번호 별칭

이 부품은 다음과 같은 대체 부품 번호로 알려져 있을 수 있습니다.

  • IRFIRL3705ZLPBF
  • IRL3705ZL
  • SP001576270