공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-11-15
LTD Date2021-05-15
설명
유통업체에서 제공한 Infineon AUIRF1010ZL에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
AUTOMOTIVE MOSFET 55V, 94A, 7.5 MOHM, 63 NC QG, TO-262
HEXFET POWER MOSFET Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N CH, 55V, 94A, TO-262; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:94A; Power Dissipation Pd:140W; Voltage Vgs Max:20V
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기술 사양
Physical
Case/PackageTO-262
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)94 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time92 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.84 nF
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation140 W
Rds On Max7.5 mΩ
Rise Time150 ns
Threshold Voltage2 V
Turn-Off Delay Time36 ns
Turn-On Delay Time18 ns
Dimensions
Height11.3 mm
Length10.67 mm
Width4.83 mm