공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-04-30
Lifecycle StatusNRND (Last Updated: 4 weeks ago)
관련 부품
InfineonIRL2910SPBF
Single N-Channel 100 V 3.8 W 140 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
InfineonIRF3710SPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS +/-20
InfineonIRF3710STRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS +/-20
onsemiHUF75639S3S
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
STMicroelectronicsSTB40NF10LT4
N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STripFET MOSFET
설명
유통업체에서 제공한 Infineon IRL2910STRLPBF에 대한 설명입니다.
MOSFET N-CH 100V 55A D2PAK "N-Channel 100 V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK"
Single N-Channel 100 V 0.026 Ohm 140 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 55A 3-Pin (2+Tab) D2PAK T/R
Infineon N-Ch HEXFET MOSFET, Vds=100V 55A D2PAK (TO-263) SMD 3-Pin
MOSFET, 100V, 55A, 26 MOHM, 93.3 NC QG,LOGIC LEVEL, D2-PAK
HEXFET Power MOSFET Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 100V, 55A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Po
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:55A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D2-Pak; Power Dissipation, Pd:200W ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 55 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 26 / Gate-Source Voltage V = 16 / Fall Time ns = 55 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)55 A
Current Rating55 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance26 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max26 mΩ
Resistance26 mΩ
Rise Time100 ns
Schedule B8541290080
Turn-Off Delay Time49 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책