Infineon IRG4RC10UPBF

600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
$ 1.27
Obsolete

가격 및 재고

데이터시트 및 문서

Infineon IRG4RC10UPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet10 페이지21년 전

Farnell

iiiC

Newark

공급망

Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-04
LTD Date2013-05-04

관련 부품

IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 9A 38W DPAK
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
STMicroelectronicsSTGD3NB60SDT4
Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R

설명

유통업체에서 제공한 Infineon IRG4RC10UPBF에 대한 설명입니다.

600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA
Compliant Surface Mount 11 ns No SVHC SMD/SMT DPAK 8.5 A 3
IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1

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