대체 부품
Price @ 1000
$ 2.37
$ 0.654
Stock
56,950
496,239
Authorized Distributors
1
4
Mount
Through Hole
Through Hole
Case/Package
TO-262
TO-262
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
39 A
39 A
Threshold Voltage
-
4 V
Rds On Max
16.5 mΩ
16.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
107 W
3.8 W
Input Capacitance
1.696 nF
1.696 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
VishaySIR422DP-T1-GE3
Trans MOSFET N-CH 40V 40A 8-Pin PowerPAK SO T/R / MOSFET N-CH 40V 40A PPAK SO-8
InfineonIPI084N06L3GXKSA1
MOSFET N-CH 60V 50A TO262-3 / N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
설명
유통업체에서 제공한 Infineon AUIRFZ46NL에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 39A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 55V 53A Automotive 3-Pin(3+Tab) TO-262 Tube
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)39 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance16.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.696 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance16.5 mΩ
Package Quantity1000
Power Dissipation107 W
Rds On Max16.5 mΩ
Rise Time76 ns
Turn-Off Delay Time52 ns
Turn-On Delay Time14 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm