공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-30
Lifecycle StatusObsolete (Last Updated: 9 months ago)
관련 부품
InfineonIPI084N06L3GXKSA1
MOSFET N-CH 60V 50A TO262-3 / N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
설명
유통업체에서 제공한 onsemi FQI13N06LTU에 대한 설명입니다.
Trans MOSFET N-CH 60V 13.6A 3-Pin(3+Tab) I2PAK Rail
Power Field-Effect Transistor, 13.6A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
3.75W(Ta)，45W(Tc) 2.5V@ 250µA 6.4nC@ 5V 1individualNChannel 60V 110mΩ@ 6.8A,10V 350pF@25V I2PAK，TO-262 Through hole mounting
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onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13.6 A
Current Rating13.6 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.75 W
Rds On Max110 mΩ
Rise Time90 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)60 V