대체 부품
Price @ 1000
$ 0.735
$ 2.7
Stock
94,647
150,479
Authorized Distributors
2
2
Mount
Surface Mount, Through Hole
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
76 A
76 A
Threshold Voltage
-
-
Rds On Max
8.4 mΩ
8.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
125 W
125 W
Input Capacitance
4.02 nF
4.02 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-09-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIRFS7762TRLPBF
MOSFET N-CH 75V 85A D2PAK / N-Channel 75 V 85A (Tc) 140W (Tc) Surface Mount PG-TO263-3
InfineonAUIRFS3607
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
onsemiHUF75345S3S
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 75A D2PAK
설명
유통업체에서 제공한 Infineon IRFS7787PBF에 대한 설명입니다.
Single N-Channel 75 V 8.4 mOhm 73 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 75V 76A 3-Pin(2+Tab) D2PAK Tube
Brushed Motor drive applications | MOSFET N-CH 75V 76A D2PAK
MOSFET, 75V, 76A, 8.4 Ohm, 73 nC, D2PAK
Power Field-Effect Transistor, 76A I(D), 75V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.02 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8.4 mΩ
Package Quantity1000
Power Dissipation125 W
Rds On Max8.4 mΩ
Rise Time48 ns
Schedule B8541290080
Turn-Off Delay Time51 ns
Turn-On Delay Time11 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm