Infineon IRF3415SPBF

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;D2Pak;PD 200W;VGS +/-20V

MOSFET N-CH 150V 43A D2PAK "N-Channel 150 V 43A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK"

Single N-Channel 150 V 42 mOhm 200 nC HEXFET® Power Mosfet - D2PAK

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Trans MOSFET N-CH 150V 43A 3-Pin(2+Tab) D2PAK

3.8W(Ta)，200W(Tc) 20V 4V@ 250µA 200nC@ 10 V 1individualNChannel 150V 42mΩ@ 22A,10V 43A 2.4nF@25V D2PAK SMD mount 6.5mm*6.22mm*2.3mm

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

N CHANNEL MOSFET, 150V, 43A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:43A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:150A; SMD Marking:IRF3415S; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V