공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-11-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIRFS52N15DTRRP
Mosfet, Power; N-ch; Vdss 150V; Rds(on) 32MILLIOHMS; Id 51A; D2PAK; Pd 230W; Vgs +/-30
InfineonIRF3415SPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;D2Pak;PD 200W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRFS41N15DPBF에 대한 설명입니다.
Single N-Channel 150 V 45 mOhm 72 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 41A 3-Pin(2+Tab) D2PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 150V, 41A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)41 A
Current Rating41 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.52 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Elements1
On-State Resistance45 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max45 mΩ
Resistance45 MΩ
Rise Time63 ns
TerminationSMD/SMT
Threshold Voltage5.5 V
Turn-Off Delay Time25 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)150 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm