가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFS3004TRLPBF | 364 | 1 | Cut Tape | ||||||||
| Rochester Electronics | IRFS3004TRLPBF | 3,243 | 12h | |||||||||
| RS (Formerly Allied Electronics) | IRFS3004TRLPBF | 0 | 800 | Bulk | 2h | |||||||
| Farnell | IRFS3004TRLPBF | 0 | 1 | Cut Tape | 12h | |||||||
| Win Source | WS-IRFS3004TRLPBF | 20 | 20 | 13h |
대체 부품
Price @ 1000
$ 1.88
$ 2.58
$ 2.58
Stock
204,556
108,878
108,878
Authorized Distributors
4
1
1
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-252-3
TO-252-3
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
195 A
195 A
195 A
Threshold Voltage
-
-
-
Rds On Max
1.75 mΩ
1.75 mΩ
1.75 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
380 W
380 W
380 W
Input Capacitance
9.2 nF
9.2 nF
9.2 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-02-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
관련 부품
InfineonIRLS3034TRLPBF
Power MOSFET, N Channel, 40 V, 195 A, 0.0017 ohm, TO-263 (D2PAK), Surface Mount
InfineonAUIRF2804S
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
STMicroelectronicsSTB270N4F3
Automotive-grade N-channel 40 V, 1.6 mOhm typ., 160 A STripFET F3 PowerMOSFET in D2PAK package
설명
유통업체에서 제공한 Infineon IRFS3004TRLPBF에 대한 설명입니다.
MOSFET N-CH 40V 195A D2PAK / Trans MOSFET N-CH Si 40V 340A 3-Pin(2+Tab) D2PAK T/R
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 40 V 380 W 240 nC Silicon Surface Mount Mosfet - TO-263-3
MOSFET, 40V, 195A, 1.7 MOHM, 160 NC QG,D2PAK
Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:195mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):1.4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V; Power Dissipation, Pd:380W ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.75 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.75 mΩ
Package Quantity800
PackagingTape & Reel
Power Dissipation380 W
Rds On Max1.75 mΩ
Rise Time220 ns
Schedule B8541290080
Turn-Off Delay Time90 ns
Turn-On Delay Time23 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.652 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책