공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-30
Lifecycle StatusEOL (Last Updated: 1 day ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
관련 부품
InfineonAUIRF2804S
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonAUIRF2804STRL
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
STMicroelectronicsSTB270N4F3
Automotive-grade N-channel 40 V, 1.6 mOhm typ., 160 A STripFET F3 PowerMOSFET in D2PAK package
설명
유통업체에서 제공한 onsemi FDB024N04AL7에 대한 설명입니다.
Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R
N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 40V, 100A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Weight1.312 g
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.3 nF
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation214 W
Rds On Max2.4 mΩ
Rise Time8 ns
Threshold Voltage1 V
Turn-Off Delay Time71 ns
Turn-On Delay Time17 ns
Dimensions
Height9.4 mm
Length10.8 mm
Width4.3 mm