대체 부품
Price @ 1000
$ 0.718
$ 0.515
$ 0.515
Stock
700,993
572,425
572,425
Authorized Distributors
5
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
-
-
-
Rds On Max
11 mΩ
11 mΩ
11 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
91 W
91 W
91 W
Input Capacitance
1.72 nF
1.72 nF
1.72 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-12-20
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
관련 부품
InfineonIPD50N04S408ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 7.9 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount
InfineonIPD50N04S410ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 0.0085 ohm, TO-252 (DPAK), Surface Mount
onsemiFDD10AN06A0
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
설명
유통업체에서 제공한 Infineon IRFR48ZTRLPBF에 대한 설명입니다.
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
IRFR48 Series 55V 42A 91W 11mOhm SMD Single N-Channel MOSFET TO-252AA (DPAK)
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Mosfet, N-Ch, 55V, 42A, 175Deg C, 91W; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.00886Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Infineon IRFR48ZTRLPBF
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.72 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation91 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance11 mΩ
Package Quantity3000
Power Dissipation91 W
Rds On Max11 mΩ
Rise Time61 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time15 ns
Dimensions
Height2.52 mm
Length10.3886 mm
Width6.73 mm