공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-12
LTD Date2018-04-12
관련 부품
onsemiNTD4858NAT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.2A Ta 73A Tc 13.6A 2W 25V
InfineonIRLR8259TRPBF
IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3
onsemiNTD50N03RT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 6.8ns
설명
유통업체에서 제공한 Infineon IRFR3704ZTRLPBF에 대한 설명입니다.
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 60A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):8.4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.19 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8.4 mΩ
Package Quantity3000
Power Dissipation48 W
Rds On Max8.4 mΩ
Rise Time8.9 ns
Turn-Off Delay Time4.9 ns
Turn-On Delay Time41 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm