공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-05-29
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
InfineonIPD050N03LGATMA1
Power MOSFET, N Channel, 30 V, 50 A, 0.0042 ohm, TO-252 (DPAK), Surface Mount
InfineonIPD060N03LGATMA1
N-Channel 30 V 50 A 6 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
설명
유통업체에서 제공한 Infineon IPF05N03LAG에 대한 설명입니다.
Trans MOSFET N-CH 25V 50A 4-Pin(3+Tab) TO-252
Compliant Surface Mount 4.8 ns Lead Free Tape & Reel (TR) 7.8 ns 5.1 mΩ TO-252-3
94W(Tc) 20V 2V@ 50¦ÌA 25nC@ 5 V 1N 25V 5.1m¦¸@ 30A,10V 50A 3.11nF@15V TO-252 6.5mm*6.22mm*2.28mm
Power Field-Effect Transistor, 50A I(D), 25V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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- Infineon Technologies
- INF
- INFINEO
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- INFENION
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- INFIEON
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- IR/INFINEON
- INFINEON/IR
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)50 A
Current Rating50 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time4.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.11 nF
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation94 W
Rds On Max5.1 mΩ
Rise Time7.8 ns
Turn-Off Delay Time31 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)25 V