대체 부품
Price @ 1000
$ 0.337
$ 1.88
Stock
370,014
453,831
Authorized Distributors
3
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
1.9 V
-
Rds On Max
8.7 mΩ
8.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
48 W
48 W
Input Capacitance
900 pF
900 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
관련 부품
InfineonIRLR8259TRPBF
IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3
InfineonIRFR3704ZPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 6.7Milliohms;ID 60A;D-Pak (TO-252AA);PD 48W
onsemiNTD4858NAT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.2A Ta 73A Tc 13.6A 2W 25V
onsemiNTD50N03RT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 6.8ns
onsemiNTD50N03RT4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 4ns
설명
유통업체에서 제공한 Infineon IRLR8259PBF에 대한 설명입니다.
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH 25V 57A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:25V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Package / Case:D-PAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance8.7 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Fall Time8.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
On-State Resistance8.7 mΩ
Package Quantity3000
Power Dissipation48 W
Rds On Max8.7 mΩ
Recovery Time26 ns
Resistance8.7 MΩ
Rise Time38 ns
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time9.1 ns
Turn-On Delay Time8.4 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm