Infineon IRFR3607PBF

Name: Infineon IRFR3607PBF
Brand: Infineon
SKU: IRFR3607PBF

MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 7.34 Milliohms; ID 56A; D-Pak; PD 140W; VGS +/-2

$ 1.71

Obsolete

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모든 가격 할인 보기

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR3607PBF	0	5	Bulk		1.900	1.710	1.710	1.710	3h
Farnell	IRFR3607PBF	0	1		1.858*	1.438*	1.107*	0.797*	0.781*	1d
Win Source	WS-IRFR3607PBF	44,000	145					0.262	0.235	12h
Worldway Electronics	IRFR3607PBF	14,134	7	Tube		0.087	0.084	0.080	0.080	11h
Fly-Wing Technology	IRFR3607PBF	390,007			0.538	0.441	0.428	0.400	0.400	1d

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRFR3607PBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet10 페이지16년 전

Datasheet11 페이지16년 전

Newark

element14 APAC

iiiC

RS (Formerly Allied Electronics)

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InfineonIRFR3607PBF

InfineonIRFR3607TRPBF

Price @ 1000

$ 1.71

$ 0.719

Stock

472,596

2,001,518

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

56 A

Threshold Voltage

4 V

2 V

Rds On Max

9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

3.07 nF

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-03-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

설명

유통업체에서 제공한 Infineon IRFR3607PBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 56A;D-Pak;PD 140W;VGS +/-2

RS (Formerly Allied Electronics)

Single N-Channel 75 V 9 mOhm 56 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

Infineon

HEXFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:DPAK; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC