Infineon IRFR3410PBF

Name: Infineon IRFR3410PBF
Brand: Infineon
SKU: IRFR3410PBF

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 34Milliohms; ID 31A; D-Pak (TO-252AA); -55deg

$ 1.33

Obsolete

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모든 가격 할인 보기

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR3410PBF	0	5	Bulk		1.470	1.330	1.330	1.330	9h
Farnell	IRFR3410PBF	0	5			1.111*	0.768*	0.535*	0.524*	2h
Win Source	WS-IRFR3410PBF	43,640	125					0.321	0.321	18h
Worldway Electronics	IRFR3410PBF	18,387	7	Tube		0.199	0.193	0.183	0.183	16h
SHENGYU ELECTRONICS	IRFR3410PBF	15,247	1		0.590	0.578	0.560	0.540	0.520	3d

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRFR3410PBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Newark

Datasheet11 페이지21년 전

Datasheet10 페이지20년 전

IHS

TME

RS (Formerly Allied Electronics)

Jameco

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-09-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

설명

유통업체에서 제공한 Infineon IRFR3410PBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg

RS (Formerly Allied Electronics)

Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

IRFR3410PBF,MOSFET, 100V, 31A, 39 MOHM, 37 NC QG, D-PAK<AZ

Jameco

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, 100V, 31A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; SMD Marking:IRFR3410; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC