가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR3410TRPBF | 2,000 | 2K | 2d | ||||||||
| Newark | IRFR3410TRPBF | 2,129 | 5 | Cut Tape | ||||||||
| Arrow Electronics | IRFR3410TRPBF | 5,315 | 1 | |||||||||
| Future Electronics | IRFR3410TRPBF | 974,000 | 2K | Tape & Reel | ||||||||
| Rutronik | TMOSP12287 | 2,000 | 2K | 6h |
관련 부품
InfineonIRFR3411PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 36Milliohms;ID 32A;D-Pak (TO-252AA);-55deg
InfineonIRFR540ZTRPBF
Trans MOSFET N-CH Si 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 35A DPAK
InfineonIRFR540ZTRLPBF
Power MOSFET, N Channel, 100 V, 35 A, 28.5 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
STMicroelectronicsSTD20NF10T4
N-channel 100 V, 0.038 Ohm typ., 25 A STripFET II Power MOSFET in a DPAK package
onsemiNVD6495NLT4G
N-Channel Logic Level Power MOSFET 100V, 25A, 50mΩ Automotive Power MOSFET 100V Logic Level
설명
유통업체에서 제공한 Infineon IRFR3410TRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:110W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFR3410TRPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 31 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 39 / Gate-Source Voltage V = 20 / Fall Time ns = 13 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
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- Infineon Technologies
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- INFIN
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance39 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.69 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance39 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation110 W
Rds On Max39 mΩ
Resistance39 MΩ
Rise Time27 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time12 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책