공급망
Country of OriginMainland China, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-30
Lifecycle StatusProduction (Last Updated: 3 months ago)
LTB Date2026-05-31
LTD Date2026-11-30
관련 부품
InfineonIRFP4137PBF
Power Field-Effect Transistor, 38A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRFP3710PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 57A;TO-247AC;PD 200W;VGS +/-20V
InfineonAUIRFP2907
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package, TO247-3, RoHS
설명
유통업체에서 제공한 Infineon IRFP4868PBF에 대한 설명입니다.
Trans MOSFET N-CH 300V 70A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 300V 70A TO-247AC
Single N-Channel 300 V 32 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC
300V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 300 V, 70 A, 0.0255 ohm, TO-247AC, Through Hole
MOSFET N-CH 300V 70A TO-247AC-TRANSISTOR
Power Field-Effect Transistor, 70A I(D), 300V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:70A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:517W; No. of Pins:3Pins RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)70 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.774 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation517 W
Min Breakdown Voltage300 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance32 mΩ
Package Quantity400
Power Dissipation517 W
Rds On Max32 mΩ
Recovery Time351 ns
Resistance32 MΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time62 ns
Turn-On Delay Time24 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm