공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRFP2907ZPBF
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 310 W
InfineonAUIRFP1405
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package, TO247-3, RoHS
설명
유통업체에서 제공한 Infineon AUIRFP2907에 대한 설명입니다.
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package, TO247-3, RoHS
Infineon SCT
Trans MOSFET N-CH 75V 209A Automotive 3-Pin(3+Tab) TO-247AC Tube
Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, N CH, 75V, 90A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:470W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation470 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity400
Power Dissipation470 W
Rds On Max4.5 mΩ
Rise Time190 ns
Turn-Off Delay Time130 ns
Turn-On Delay Time23 ns
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm