공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-30
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
관련 부품
International RectifierAUIRFP4409
Power Field-Effect Transistor, 38A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRFP4868PBF
Trans MOSFET N-CH 300V 70A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 300V 70A TO-247AC
InfineonIRFP4229PBF
MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W
설명
유통업체에서 제공한 Infineon IRFP4137PBF에 대한 설명입니다.
Power Field-Effect Transistor, 38A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Single N-Channel 300 V 69 mOhm 83 nC HEXFET® Power Mosfet - TO-247-3AC
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness | MOSFET N-CH 300V 38A TO-247AC
300V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance56 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.168 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation341 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance69 mΩ
Package Quantity400
Power Dissipation341 W
Rds On Max69 mΩ
Resistance69 MΩ
Rise Time23 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time34 ns
Turn-On Delay Time18 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책