공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-01
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
InfineonIRFP260NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V
InfineonIRFP250MPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
InfineonIRFP4227PBF
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
설명
유통업체에서 제공한 Infineon IRFP260MPBF에 대한 설명입니다.
Trans MOSFET N-CH Si 200V 50A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 50A TO-247AC
Single N-Channel 200 V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247-3AC
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole
IR MOSFET Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET Operating temperature: -55...175 °C Housing type: TO-247-3 Polarity: N Variants: Enhancement mode Power dissipation: 300 W
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:300W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFP260MPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
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- Infineon Technologies
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- INFENION
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- INFINEON TECHNOLOGIE
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.057 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance40 mΩ
Package Quantity400
Power Dissipation300 W
Rds On Max40 mΩ
Rise Time60 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time17 ns
Dimensions
Height24.99 mm
Length16.129 mm
Width5.2 mm