관련 부품
InfineonIRFP250NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V
InfineonIRFP140NPBF
MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC
VishayIRFP9140PBF
Power MOSFET, General Purpose, P Channel, 100 V, 21 A, 0.2 ohm, TO-247AC, Through Hole
설명
유통업체에서 제공한 Infineon IRFP250MPBF에 대한 설명입니다.
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
Infineon SCT
Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N-CH, 200V, 30A, TO-247AC-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 43 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AD / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 214
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.159 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance75 mΩ
Package Quantity400
Power Dissipation214 W
Rds On Max75 mΩ
Resistance75 MΩ
Rise Time43 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time41 ns
Turn-On Delay Time14 ns
Dimensions
Height24.99 mm
Length16.129 mm
Width5.2 mm