Infineon IRFP4227PBF

MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W

Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC

Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

N Channel Mosfet, 200V, 65A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:65A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:30V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFP4227PBF

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V