공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRFP140NPBF
MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC
InfineonIRFP044NPBF
MOSFET, Power; N-Channel; 0.020 Ohms (Max.) @ 10 V, 29 A; 55 V (Min.); 40 degC/
설명
유통업체에서 제공한 Vishay IRFP9240PBF에 대한 설명입니다.
Single P-Channel 200 V 0.5 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 12A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
P Channel Mosfet, -200V, 12A To-247; Transistor Polarity:p Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.5Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
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기술 사양
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vdss)-200 V
Dual Supply Voltage-200 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation150 W
Rds On Max500 mΩ
Recovery Time300 ns
Resistance500 mΩ
Rise Time43 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-200 V
Dimensions
Height25.11 mm
Length15.87 mm
Width5.31 mm